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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Silicon Transistor VOLTAGE 30 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT589PT CURRENT 1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * High saturation current capability. .110 (2.80) .082 (2.10) (1) * Voltage controlled small signal switch. .066 (1.70) .119 (3.04) (3) (2) CONSTRUCTION * PNP Silicon Transistor MARKINTG 589 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) E (2) .019 (0.50) * Small surface mounting type. (SOT-23) * High current (Max.=200mA). * Suitable for high packing density. Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector MIN. -50 -30 -5 - - - MAX. - - - -1 -2 -200 500 +150 +150 +150 V V V A UNIT A mA mW C C C Tamb 25 C; note 1 - -55 - - 55 RATING CHARACTERISTIC CURVES ( CHT589PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -30 V IC = 0; VEB = - 4 V IC = -1 mA; VCE = -2V IC = -500mA; VCE = -2V IC = -1A; VCE = - 2V I C = -2A; VCE = -2V VCEsat collector-emitter saturation voltage Ic = -0.5A; IB=-50mA Ic = -1A; IB=-100mA IC = -2A; IB = -200 m A VBEsat VBEon Cobo base-emitter saturation voltage base-emitter turn-on voltage output capacitance IC = -1A; IB = -100 mA - - 100 100 80 40 - - - - - - MIN. MAX. -100 -100 - 300 - - UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W -0.25 -0.35 -0.65 -1.2 V V V V IC = -1A; VCE = -2V VCB = -10V; f = 1 MHz -1.1 15 V pF fT Note transition frequency IC = -100 mA; VCE = - 5 V; f = 100 MHz 100 - MHz 1. Pulse test: tp 300 s; 0.02. |
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